Stmicroelectronics and innoscience sign Gan Technology Development and Manufacturing Agreement
- Joint development contract (JDA) on GAN technology to build the future in power electronics for AI data centers, generation and renewable energy storage, cars and more
- Innoscience can use the manufacturing capacity of ST in Europe while ST can take advantage of the manufacturing capacity in Innoscience in China
Geneva and Suzhou, March 31st2025 – Stmicroelectronics (NYSE: STM), A world leader in semiconductors at the service of customers through the spectrum of electronic applications, and Innoscience (Hkex: 02577.hk)The world leader in low-cost manufacturing Gan-on-Si (Gallium nitride on silicon), announces the signing of an agreement on the development and manufacture of GAN technology, by taking advantage of the forces of each company to improve GAN power solutions and the resilience of the supply chain.
Companies have agreed with a joint development initiative on Gan Power Technology, to advance the promising future of GAN energy for consumer electronics, data centers, car and industrial food systems and many other applications in the years to come. In addition, the agreement allows Innoscience to use the frontal manufacturing capacity of ST outside of China for its GAN platelets, while ST can take advantage of the frontal manufacturing capacity of Inoscience in China for its own GAN plates. The common ambition is that each company expands its individual offer in GAN with flexibility and resilience of the supply chain to cover the requirements of all customers in a wide range of applications.
Marco Cassis, president, analog, power and discreet, Mems and sensors of the Stmicroelectronics declared: “St and Innoscience are both manufacturers of integrated devices, and with this agreement, we take advantage of this model for the benefit of our customers in the world. First of all, ST will accelerate its roadmap in Gan Power Technology to complete its offer of silicon and silicon carbide. Second, ST will be able to take advantage of a flexible manufacturing model to serve customers worldwide. »»
Dr. Weiwei Luo, president and founder of Innoscience, said “Gan technology is essential to improve electronics, creating smaller and more effective systems that save electrical energy, the lower cost and the reduction in CO2 Shows. Innoscience launched the mass production of 8 -inch GAN technology and has sent more than a billion GAN devices on several markets, and we are very happy to move on to a strategic collaboration with ST. The joint collaboration between St and Innoscience will expand and accelerate the adoption of GAN technology. Together, the teams of Innoscience and ST will develop the next generations of Gan technology ”.
The GAN power devices use the fundamental properties of materials that allow new system performance standards in power conversion, movement control and activation, offering significantly lower losses, which allows increased efficiency, smaller size and lighter weight, thus reducing the overall cost of the solution and the carbon footprint; These devices are quickly adopted in consumer electronics, the data center and industrial power supplies and solar inverters, and are actively designed in new generation EV motorcycle groups due to their substantial and weight reduction advantages.
About Stmicroélectronique
In St, we are 50,000 creators and manufacturers of semiconductor technologies mastering the semiconductor supply chain of advanced manufacturing facilities. Manufacturer of integrated devices, we work with more than 200,000 customers and thousands of partners to design and create products, solutions and ecosystems that come up their challenges and opportunities, and the need to support a more sustainable world. Our technologies allow smarter mobility, more effective management of energy and energy, and large -scale deployment of autonomous things connected to the cloud. We are on the right track to be neutral carbon in all direct and indirect emissions (SCOPES 1 and 2), product transport, business trips and employee turnipping emissions (our scope 3 orientation) and to achieve our renewable electricity supply objective at the end of 2027. www.st.com.
About innosciences
Innoscience (Hkex: 02577.HK) is the world leader in innovation in the gallium nitride process and the manufacture of electric devices. The design and performance of innoscience devices establish the global standard for GAN, and the culture of continuous improvement will accelerate GAN performance and market adoption. The company’s gallium nitride products are used in several low, medium and high voltage applications, with GAN process nodes covering 15 V to 1200 V. Platelets, discreet devices, integrated integrated circuits and modules provide customers with robust gan solutions. With 800 patents awarded or pending, innoscience products are known for reliability, performance and functionalities in the fields of consumer electronics, automotive electronics, data centers, renewable energies and industrial energy. Innoscience creates a brilliant future for Gan. Please visit www.innoscience.com For more information.
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