Nanoelectronics deals with extremely small electronic components – transistors, sensors and circuits that can fit on the tip of a needle. This technology powers our daily lives through devices such as computers, smartphones and medical tools.
To improve the efficiency – and power – of these devices, scientists are looking for alternative materials to replace standard silicon-based semiconductors.
A Buffalo university study, published in the Jan. 6 issue of the American Chemical Society (ACS) Journal ACS Nano, explores how mixing two-dimensional materials with silicon could achieve this goal. The paper suggests a better way to inject and transport electrical charges – a progression that showcases the significant potential of 2D materials in advancing future semiconductor technologies.
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“Our work investigates how emerging 2D materials can be integrated with existing silicon technology to enhance functionality and improve performance, paving the way for energy-efficient nanoelectronics,” said the study’s lead author Huamin Li, PhD, associate professor in the Department of Electrical Engineering . “More complex devices, such as three-terminal transistors, can benefit from our discovery, achieving improved functionality and performance.”
Fei Yao, PhD, assistant professor in the Department of Materials Design and Innovation, is co-led author of the study.
“As scientists, we want to make components smaller so they can do more work in less space,” she said. “This will allow us to create more powerful and compact cutting-edge technology.”
Li and Yao collaborated with co-author Vasili Perebeinos, PhD, professor in the Department of Electrical Engineering. All three are members of the Center for Advanced Semiconductor Technologies, an interdisciplinary research center that develops cutting-edge microelectronics solutions while training the next generation of leaders for the semiconductor industry.
Additional study co-authors, many of whom are experts in 2D materials, physics and nanoelectronics, work in China, Korea, Austria and Italy.
“This collaboration highlights UB’s leadership in cutting-edge semiconductor research and its ability to foster impactful international and interdisciplinary partnerships,” Yao said.
In the study, the team demonstrated that using thin 2D materials, such as the semiconductor molybdenum disulfide (MOS2), in combination with silicon, can create highly efficient electronic devices with excellent control over the way in which an electric charge is injected and transported. The presence of the 2D material between the metal and silicon – although MOS2 is less than a nanometer thick – can change the way current electrical charge flows.
“2D material mainly affects charge injection, or how charge enters the material, but doesn’t really affect charge collection, or how charge leaves the material,” Li said. regardless of the specific properties of the 2D material. So whether you use semiconductor MOS2, semimetal graphene, or H-BN (hexagonal boron nitride) insulator, they may play different roles in charge injection, but all behave the same regarding charge collection. Essentially, the 2D material in this special condition acts almost as if it is invisible or has no resistance to collecting charges. »
Although integrating 2D materials with silicon is a promising avenue for next-generation electronics, Li said, significant challenges remain, particularly in understanding and transporting engineering charges where 2D material meets the 3D material.
“Our study provides critical insights into the energy band structure and charge transport mechanisms at the 2D/3D interface, particularly when 2D materials are reduced to monolayers,” he said. “Over time, this research could inspire the development of new 2D material and device concepts, ultimately leading to more efficient and powerful electronic devices for everyday use.”
Reference: Cabanillas A, Shahi S, Liu M, et al. Huge rectification and out-of-plane charge conductance through two-dimensional monolayers. Nano ACS. 2025: ACSNANO.4C15271. doi: 10.1021/acsnano.4c15271
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